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Advance Technical Information
GigaMOSTM TrenchT2 HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK240N15T2 IXFX240N15T2
RDS(on) trr
TO-264 (IXFK)
VDSS ID25
= =
150V 240A 5.2m 140ns
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 175C
Maximum Ratings 150 150 20 30 240 160 600 120 2 1250 20 -55 ... +175 175 -55 ... +175 V V V V A A A A J W V/ns C C C C C Nm/lb.in. N/lb. g g
G = Gate S = Source D = Drain TAB = Drain
G D S
(TAB)
PLUS247 (IXFX)
(TAB)
Features International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247)
300 260 1.13/10 20..120 /4.5..27 10 6
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 150C
Characteristic Values Min. Typ. Max. 150 2.5 5.0 200 V V nA
Applications Synchronous Recification DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications
25 A 3 mA 4.1 5.2 m
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS100191(09/09)
IXFK240N15T2 IXFX240N15T2
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.15 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 125 210 32 2280 270 1.50 48 125 77 145 460 125 130 0.12 S nF pF pF ns ns ns ns nC nC nC C/W C/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-264 (IXFK) Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 100A, VGS = 0V, Note 1 IF = 120A, -di/dt = 100A/s VR = 75V, VGS = 0V 410 8.2 Characteristic Values Min. Typ. Max. 240 960 1.2 140 A A V ns nC A
PLUS 247TM (IXFX) Outline
Note 1. Pulse test, t 300s; duty cycle, d 2%.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
7,157,338B2
6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
IXFK240N15T2 IXFX240N15T2
Fig. 1. Output Characteristics @ T J = 25C
240 VGS = 15V 10V 8V 7V 400 350 300 6V 120 VGS = 10V 8V 7V
Fig. 2. Extended Output Characteristics @ T J = 25C
200
160
ID - Amperes
ID - Amperes
250 200 150 100
6V
5.5V
80
5.5V
40
5V
50 0
5V
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 150C
240 VGS = 15V 10V 8V 7V 6V 3.0
Fig. 4. RDS(on) Normalized to ID = 120A Value vs. Junction Temperature
VGS = 10V 2.6 2.2 1.8 1.4 1.0 0.6 I D = 240A I D = 120A
200
160
120 5V
80
40 4V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
R DS(on) - Normalized
ID - Amperes
0.2 -50 -25 0 25 50 75 100 125 150 175
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 120A Value vs. Drain Current
3.4 VGS = 10V 3.0 2.6 2.2 1.8 1.4 TJ = 25C 1.0 0.6 0 40 80 120 160 200 240 280 320 360 40 20 0 -50 TJ = 175C 180 160 140 120
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit
R DS(on) - Normalized
ID - Amperes
100 80 60
-25
0
25
50
75
100
125
150
175
ID - Amperes
TC - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFK240N15T2 IXFX240N15T2
Fig. 7. Input Admittance
200 180 160 140 300 25C 400 TJ = - 40C 350
Fig. 8. Transconductance
g f s - Siemens
ID - Amperes
120 100 80 60 40 20 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 TJ = 150C 25C - 40C
250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 180 200 150C
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
320 280 240 10 9 8 7 VDS = 75V I D = 120A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
VGS - Volts
TJ = 150C TJ = 25C
200 160 120 80 40 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
6 5 4 3 2 1 0 0 50 100 150 200 250 300 350 400 450 500
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100.0 1,000.0
Fig. 12. Forward-Bias Safe Operating Area
RDS(on) Limit 25s
f = 1 MHz
Capacitance - NanoFarads
Ciss 10.0
100.0 External Lead Limit
100s
ID - Amperes
10.0
1ms
1.0
Coss
10ms 1.0 TJ = 175C TC = 25C Crss Single Pulse 0.1 0 5 10 15 20 25 30 35 40 1 10 100 1,000 DC 100ms
0.1
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF:F_240N15T2(8V)9-11-09
IXFK240N15T2 IXFX240N15T2
Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature
380 340 300 RG = 1 , VGS = 10V VDS = 75V 320 280 240
D
Fig. 14. Resistive Turn-on Rise Time vs. Drain Current
RG = 1 , VGS = 10V VDS = 75V
t r - Nanoseconds
t r - Nanoseconds
I 260 220 180 140 100 60 25 35 45 55 65 75 I
= 240A
200 160 120 80 40 0 TJ = 125C
TJ = 25C
D
= 120A
85
95
105
115
125
60
80
100
120
140
160
180
200
220
240
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance
700 600 500 400 I D = 240A 300 200 100 0 1 2 3 4 5 6 7 8 9 10 I D = 120A 90 60 30 0 210 600
Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature
120
tr
VDS = 75V
td(on) - - - -
TJ = 125C, VGS = 10V
180 150 120
tf
500 VDS = 75V
td(off) - - - 110
RG = 1, VGS = 10V
t d(on) - Nanoseconds
t d(off) - Nanoseconds
t r - Nanoseconds
t f - Nanoseconds
400
100
300
I D = 240A
90
200
I D = 120A
80
100
70
0 25 35 45 55 65 75 85 95 105 115
60 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs. Drain Current
400 350 300 140 700
Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance
600
tf
VDS = 75V
td(off) - - - -
RG = 1, VGS = 10V TJ = 125C
130 120
tf
600 VDS = 75V
td(off) - - - 500
TJ = 125C, VGS = 10V
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f - Nanoseconds
250 200 150 100 50 0 60 80 100 120 TJ = 25C
110 100 90 80 70 60 240
t f - Nanoseconds
500 I D = 240A I D = 120A
400
400
300
300
200
200
100
100 1 2 3 4 5 6 7 8 9 10
0
140
160
180
200
220
ID - Amperes
RG - Ohms
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFK240N15T2 IXFX240N15T2
Fig. 19. Maximum Transient Thermal Impedance
1.000
Fig. 19. Maximium Transient Thermal Impedance
0.200 0.100
.sadgsfgsf
Z (th)JC - C / W
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF:F_240N15T2(8V)9-11-09

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